IEC 63011-3 Ed. 1.0 b:2018
Integrated circuits - Three dimensional integrated circuits - Part 3: Model and measurement conditions of through-silicon via
International Electrotechnical Commission , 11/28/2018
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IEC 63011-3:2018 specifies a reference model of through-silicon via (TSV) electrical characteristics required for an interface design in three dimensional integrated circuit (3-D IC) to transmit and receive digital data and measurement conditions for resistance and capacitance to specify TSV characteristics in 3-D IC.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
Power devices, RF devices and micro-electromechanical systems (MEMS) are not in the scope of this document.
Product Information
Published:
11/28/2018
Pages:
28
File Size:
1 file , 2.5 MB
Language:
English, French
Note:
This product is unavailable in Ukraine, Russia, Belarus
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