IEC 62373-1 Ed. 1.0 b:2020
Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
International Electrotechnical Commission , 07/15/2020
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IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
This document also defines the terms pertaining to the conventional BTI test method.
Product Information
Published:
07/15/2020
Pages:
44
File Size:
1 file , 1.7 MB
Language:
English, French
Note:
This product is unavailable in Ukraine, Russia, Belarus
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