IEC 63284 Ed. 1.0 b:2022
Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors
International Electrotechnical Commission , 04/01/2022
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This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.
Product Information
Published:
04/01/2022
Pages:
30
ISBN:
9782832211016
File Size:
1 file , 970 KB
Language:
English, French
Note:
This product is unavailable in Ukraine, Russia, Belarus
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