IEC 63068-1 Ed. 1.0 en:2019
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects
International Electrotechnical Commission , 01/30/2019
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IEC 63068-1:2019(E) gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
Product Information
Published:
01/30/2019
Pages:
23
File Size:
1 file , 5.6 MB
Language:
English
Note:
This product is unavailable in Ukraine, Russia, Belarus
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