IEC 62047-9 Ed. 1.0 b:2011
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS
International Electrotechnical Commission , 07/13/2011
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IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters.
Product Information
Published:
07/13/2011
Pages:
49
File Size:
1 file , 680 KB
Language:
English, French
Note:
This product is unavailable in Ukraine, Russia, Belarus
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